Nanostructures of hole and column arrays in a Si substrate with a self-ordered configuration having a 100 nm periodicity were fabricated by the pattern transfer of the hole configuration of anodic porous alumina used as a mask. The transfer of the nanopatterns was achieved by a combined process involving localized anodization of Si and subsequent chemical etching. Using this process, it is possible to fabricate negative and positive patterns by changing the etching conditions. (c) 2005 The Electrochemical Society.