This paper reports the results from an investigation of the effects of nanometer thick aluminum on aluminum-induced crystallization (AIC) of plasmas-enhanced chemical vapor deposited amorphous silicon (a-Si:H). Compared to traditional AIC, nanoaluminum-induced crystallization (nano-AIC) produces smooth polycrystalline silicon films with very large grains at significantly reduced temperatures. The average size of the five largest grains on the sample produced by nano-AIC at 280 degrees C is similar to 53 mu m, similar to 30 times larger than that produced by traditional AIC. To the authors' knowledge, these are the largest grains formed by AIC of a-Si: H at annealing temperatures as low as 280 degrees C. (c) 2005 The Electrochemical Society.