A poly-Si film with large grains exceeding 7000 angstrom in diameter was successfully obtained at a temperature of less than 180 degrees C, through the excimer laser annealing (ELA) of microcrystalline silicon film. The microcrystalline silicon film with a hydrogen content of about 4 atom % was deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) with helium diluted silane. By employing step-by-step ELA, both the bottom and top of the microcrystalline silicon film were dehydrogenated and recrystallized. Large grains and hillocks were observed in the fabricated polycrystalline silicon thin film. (c) 2005 The Electrochemical Society.