Atomic-layer-deposited (ALD) TiO2 thin films with a high bulk dielectric constant (k similar to 100) were grown on an ALD Ru electrode at a growth temperature of 250 C. The films were grown on flat and contact hole structured Ru electrodes. The as-deposited films were crystallized with a rutile structure due to the adoption of O-3 oxidant with a very high concentration (400 g/m(3)). The electrical measurements of the Ru/TiO2/Ru capacitors fabricated on the contact hole structures with different hole sizes and distances between the holes showed that the film's thickness, crystalline structure, and dielectric properties are uniform over the entire three-dimensional structure. (c) 2005 The Electrochemical Society.