Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force. (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.2137469] All rights reserved.