Nanoscaling of PtOx/Pb (ZrxTi1-x)O-3 (PZT)/PtOx capacitors in well-ordered arrays down to a cell size of 90 x 90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of PtOx and PZT layers was obtained with a rate of 165 nm/min in plasma of Ar/Cl-2/10%O-2 and 240 nm/min in Ar/CF4/30%O-2, respectively. The selectivity of PtOx to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of PtOx layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors. (c) 2006 The Electrochemical Society.