Germanium films were deposited by low-pressure chemical vapor deposition on TiN substrates using a Si seeding technique. By depositing a self-limiting Si film on TiN via SiH4 decomposition at 380 degrees C, a continuous, amorphous Ge film could subsequently be deposited by GeH4 decomposition at 320 degrees C. Amorphous Ge films were crystallized by thermal annealing at >= 405 degrees C for 60 m. Polycrystalline Ge films on TiN are shown to have larger grains and fewer stacking faults when deposited amorphous and subsequently crystallized, compared to films polycrystalline as-deposited. (c) 2006 The Electrochemical Society.