Seed layer free conformal ruthenium film deposition on hole substrates by MOCVD using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Kawano K; Nagai A; Kosuge H; Shibutami T; Oshima N; Funakubo H

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Electrochemical and Solid State Letters, Vol.9, No.7, C107-C109, 2006

DOI10.1149/1.2200011 Export Citation

Seed layer free conformal ruthenium film deposition on hole substrates by MOCVD using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Kawano K, Nagai A, Kosuge H, Shibutami T, Oshima N, Funakubo H

Ruthenium thin films were deposited at 260-400 degrees C on hole substrates by metallorganic chemical vapor deposition (MOCVD) using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp)] for the Ru source. The microstructure, conformability, crystallinity, and resistivity of the films were examined. Conformal films whose resistivity was below 30 mu Omega-cm were deposited below 300 degrees C on SiO2/TiAlN/Ti/SiO2/Si(100) hole substrates with aspect ratio of 1.7. Finally, conformal films with a step coverage of 97% were deposited on SiO2/Si hole substrates, even those with a high aspect ratio of 6.4, by using Ru(DMPD)(EtCp) without a seed layer. (c) 2006 The Electrochemical Society.