Titanium nitride thin films were deposited on SiO2/Si substrates at various nitrogen/argon flow ratios [N-2/(N-2 + Ar)] using a radio frequency-reactive magnetron sputtering. The structural and electrical properties of the films deposited at room temperature are characterized as a function of nitrogen/argon flow ratio. The Ti(N) phases by a nitrogen incorporation into Ti lattice up to 5% were formed and TiN phases are observed as nitrogen/argon flow ratios increase above 7%. The resistivity and temperature coefficient of resistance (TCR) values of films are strongly influenced on the phases of Ti(N) and TiN formed by different nitrogen/argon flow ratios. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%. (c) 2006 The Electrochemical Society.