Structural properties and electrical characteristics of praseodymium oxide gate dielectrics grown on Si substrate by reactive rf sputtering were investigated. The structure, composition, and interfacial characteristics of these dielectrics were examined using X-ray diffraction and X-ray photoelectron spectroscopy. It is found that Pr2O3 gate dielectric with TaN metal gate annealed at 700 degrees C exhibits a higher capacitance value (similar to 450 pF, EOT = 2.41 nm) and lower flatband voltage (similar to -0.5 V) in C-V curves, and shows the leakage value of similar to 5 x 10(-7) A/cm(2) at a bias of 2 V. They also show negligible charge trapping under high constant voltage stress. This phenomenon is attributed to a rather well-crystallized Pr2O3 and the decrease of the interfacial layer and Pr silicate thickness. (c) 2007 The Electrochemical Society.