화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.10, No.5, H135-H138, 2007
High-performance, spin-coated zinc tin oxide thin-film transistors
We have developed a general and low-cost, solution-based process that is suitable for the deposition of transparent conducting oxides through spin-coating or inkjet printing under ambient conditions. Highly transparent (similar to 95% in the visible portion) zinc tin oxide semiconducting thin films were deposited by spin coating. The deposited films were found to be smooth and uniform with an amorphous structure. Enhancement-mode metal-insulator-semiconductor field-effect transistors were fabricated showing a field-effect mobility (mu(FE)) as high as 16 cm(2)/V s, a turn-on voltage of 2 V, a current on-to-off ratio greater than 10(5), and a high on-current of 2.25 mA. (c) 2007 The Electrochemical Society.