In this work, the capacitance-voltage (C-V) characteristics of Cu/2,2'-bis-(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA)-p-phenylene diamine (PPD)/Si metal-insulator-semiconductor (MIS) capacitors after different annealing processes are investigated. During annealing (in N-2 + H-2 ambient and in vacuum), positive charges are generated in the capacitors and it leads to a shift of flatband voltage (V-FB) toward the negative-bias direction. However, the V-FB of the annealed samples moves backward (the positive bias direction) after aging at room temperature in air for 1 week. In addition, stretch-out of C-V curves is observed after the annealing process. Nevertheless, the stretch-out behavior is released after aging in air for 1 week. Influence of annealing condition and time aging effect on C-V characteristics of Cu/6FDA-PPD/Si capacitors are discussed. (c) 2007 The Electrochemical Society.