Gd(Fe1-xInx)O-3 films with x=0-0.15 were prepared at 725 degrees C by chemical solution deposition. Structure, morphology, dielectrics, leakage current behavior, and ferroelectricity were investigated. Gd(Fe1-xInx)O-3 films after substitution remained as a single phase with a larger lattice distortion. Gd(Fe1-xInx)O-3 films with the indium content at x=0.05 displayed a higher dielectric constant of 1640, a loss-tangent value of 0.37, lower leakage current, and a 2Pr value of 6.0 mu C/cm(2). At higher indium contents, Gd(Fe1-xInx)O-3 films became dense and had a lower leakage current density and lower dielectric constant. The characteristics between leakage current and applied electric field were explained.