The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with In/Zn ratio between 0.3 and 0.6 could be controlled between 10(-3) and 10(3) Omega cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm(2) V-1 s(-1). The optical transmittance of the IZO films was > 70% in all cases. Ohmic contact resistances in the range of 3-8 x 10(-5) Omega cm were obtained with both Ni/Au and Ti/Au deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous. (c) 2007 The Electrochemical Society.