Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe

Zhou P; Shin YC; Choi BJ; Choi S; Hwang CS; Lin YY; Lv HB; Yan XJ; Tang TA; Chen LY; Chen BM

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Electrochemical and Solid State Letters, Vol.10, No.9, H281-H283, 2007

Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe

Zhou P, Shin YC, Choi BJ, Choi S, Hwang CS, Lin YY, Lv HB, Yan XJ, Tang TA, Chen LY, Chen BM

The dynamic oscillation in the current-time characteristics of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin-film materials was investigated using a scanning electrical nanoprobe. The dynamic oscillation was attributed to the threshold switching of the amorphous-phase Ge2Sb2Te5 and doped Ge2Sb2Te5 thin films. The microscopic mechanism of the threshold switching behavior was also studied. X-ray diffraction showed that the excess Sb improved the crystallization of Ge2Sb2Te5 during postannealing at 300 degrees C. Sb-doping also increased the threshold switching speed. (c) 2007 The Electrochemical Society.