Selective growth of individual multiwalled carbon nanotubes

Morjan RE; Kabir MS; Lee SW; Nerushev OA; Lundgren P; Bengtsson S; Park YW; Campbell EEB

Current Applied Physics, Vol.4, No.6, 591-594, 2004

DOI10.1016/j.cap.2004.01.025 Export Citation

Selective growth of individual multiwalled carbon nanotubes

Morjan RE, Kabir MS, Lee SW, Nerushev OA, Lundgren P, Bengtsson S, Park YW, Campbell EEB

Growth of individual, vertically aligned multiwalled carbon nanotubes (VACNT) on patterned Si wafers using do plasma-enhanced CVD is described. The selective growth of individual VACNT within larger holes etched in Si is demonstrated for the first time. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:plasma-enhanced chemical vapour deposition;PECVD;multiwalled carbon nanotubes;controlled individual growth