In this Study an investigation is presented on LPCVD deposited and annealed Si-rich SiNx layers on Si substrates. The samples prepared by this way were characterized by capacitance-voltage, current-voltage, and memory hysteresis measurements. The electrical properties were studied as a function of annealing temperature. Systematic dependence of the flat-band voltage and the current have been obtained on the annealing conditions. (c) 2005 Elsevier B.V. All rights reserved.