The present work reports on the little explored correlation of electrical properties in conjunction with morphology of RIF sputtered aluminum nitride (AIN) films at different substrate temperatures (100 degrees C -400 degrees C). Electrical properties, especially insulator charge density (Q(in)) and interface state density (D-it) were studied by using Al/AlN/Si (MIS) as a test vehicle. X-ray diffraction, FTIR spectroscopy, AFM and SEM techniques were studied for crystal orientation, bond formation, surface roughness and grain size of AlN film, respectively. Relatively highly c-axis (002) oriented films were found in between 200 degrees C and 300 degrees C with FTIR absorption peak at 682 cm(-1). Decrease in Q(in) from 7.9 x 10(11) cm(-2) to 1.0 x 10(11) cm(-2) found to be associated with increase in surface roughness and grain size, with temperature. There is no significant change in interface state density with deposition temperature. It is found that better crystallinity results in a good dielectric constant. (c) 2005 Elsevier B.V. All rights reserved.