The correlation of electrical properties with magnetic properties for the (Ga1-x,Mn-x)As epilayer was investigated. For electrical transport measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga0.974Mn0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a different behavior was observed at the cryogenic temperature region. The electrical mobility of (Ga0.974Mn0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-GaAs:Be epilayer decreases with decreasing temperature. In Arrhenius plots of carrier mobility for the (Ga0.974Mn0.026)As/LT-GaAs epilayer, the critical point is observed at 69 K, and this value is almost the same as the T-C. This result indicates that the carrier transport in ferromagnetic (Ga1-xMnx)As epilayers might be related to a spin-ordering effect because the spins will be arranged with the same direction below the T-C, and this will lead to reducing the probability of spin-disorder scattering. Therefore, the observation of a gradual drop below the T-C in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering effect in the ferromagnetic (Ga0.974Mn0.026)As/LT-GaAs epilayer. (c) 2006 Elsevier B.V. All rights reserved.