This paper describes the characteristics of steady-state stress-induced leakage current (SILC) of a 10-nm-thick oxide. Data are obtained by using the high resolution floating-gate technique, at room temperature as well as at higher temperatures (20-190 degrees C). The results are interpreted by means of a new complete bulk-limited conduction theory, which generalizes the well-known Poole-Frenkel and Poole effects. This analysis leads us to argue that a thermally activated bulk-limited trap-assisted process dominates the steady-state SILC conduction mechanism in thick oxides at room/high temperature. Furthermore, it is shown that in thinner oxides, SILC conduction mechanism at room/high temperature can also be explained by the same bulk-limited theory.