In this paper, we present a non-local gate current model for sub-micron lightly doped drain (LDD) and single-drain (SD) MOSFETs. Using this model and a trapping charge mechanism, we can calculate the spatial oxide trapping charge due to the electron transport in the oxide. This model is developed by using a modified lucky electron concept to include the quantum-mechanical tunneling effect. The channel electric field is first calculated by using an analytical pseudo-2-D MOSFET model, the spatial distribution of electron temperature is generated, and the electron temperature is then derived by using a simplified energy balance equation. From the electron temperature, we calculate the spatial gate current density, and using a first-order charge trapping mechanism, we finally calculate the distribution of non-local oxide trapping charge. This model is a time-saving CAD model and is physics transparent.