The single contact electron beam induced current (SC-EBIC) technique has been shown to be more effective than conventional EBIC in the imaging of complex VLSI circuitry. This configuration allows large areas of integrated circuits to be imaged. It is proposed in this paper that the application of SC-EBIC can be extended to extracting the diffusion length of semiconductor materials. The accuracy of the diffusion length obtained with this configuration was found to be approximately the same as those obtained using conventional EBIC techniques. However, the SC-EBIC configuration requires only a single connection to the specimen and no extra connections even for multi-junction devices.