Solid-State Electronics, Vol.44, No.10, 1865-1867, 2000
Similarity relation for I-V characteristics of FETs with different channel shape
The expression is obtained, that allows applying the theory of FET with a rectangular channel to transistor with any channel shape. It is valid for FETs of all types: SOI MOSFET, bulk MOSFET, JFET, and MESFET.