A new method which can nondestructively measure the surface-state density (SSD) D-s and estimate the capture cross-sections (CCS) of surface state sigma (0)(n) and sigma (-)(p) on surface of p-type semiconductor crystals is proposed. This method is based on the photovoltage measurements at various temperatures, The photovoltage experiment was carried out with a (1 1 1)p-type Si single crystal (N-A = 4.8 x 10(14) cm(-3)). Owing to that the surface barrier height phi (BP) = 0.6421 V and the surface-recombination velocity s(n) = 9.6 x 10(3) cm s(-1) of this sample can be determined. the SSD D-s = 1.2 x 10(11) cm(-2) eV(-1) can therefore be obtained, furthermore CCS sigma (0)(n) approximate to 5 x 10(-14) cm and sigma (p) approximate to 2 x 10(-10) cm(2) can also be estimated These results are consistent with that of related reports obtained by other methods.