화학공학소재연구정보센터
Solid-State Electronics, Vol.44, No.12, 2253-2257, 2000
Analytical expression for ion-implanted impurity concentration profiles
By expanding our previously proposed analytical expression for dose-dependent ion-implanted impurity concentration profiles using a main function and a tail function, we improve the model so that the parameters can be extracted more robustly and extend the model to accommodate double-peak profiles. The shape of our new profile model can be imaged more dearly from a set of parameters.