The tunnel junction emitter is a novel vacuum electron source, based on ballistic transmission of electrons through ultra-thin foils, This source can operate at low voltages and is expected to have a high brightness and low energy spread. In this paper, we will present a simple method to fabricate tunnel junction emitters in the form of a solid state device. These devices consist of a sharp tungsten tip with a tungsten oxide layer casted in an epoxy resin. The apex of the tip is in contact with a 20 nm thick gold foil, which is deposited on the resin surface. Such a device is similar to a conventional metal-oxide-metal cathode. The difference is that for this device, the lateral size of the tunnel contact is very small. Results are presented on the tunnel current and the emission current as a function of the bias voltage between tip and foil. The threshold voltage above which electrons are emitted is in agreement with the work function of the gold foil.