A new diode structure, called planar MOS-Schottky Diode (MOSSD), is proposed to reduce the reverse leakage current in SiC Schottky diode. The reverse leakage current has been reduced by one order of magnitude by using the MOSSD structure while the reverse breakdown characteristic is improved from soft breakdown to abrupt breakdown. Further, measurements on MOSSDs with thick and thin oxide MOS regions indicate that the forward current through a MOSSD with a thin oxide can be up to 90% that through a conventional Schottky diode without buried MOS structures. From high temperature measurements it is evident that the reverse characteristics of MOSSDs have less temperature dependence compared to pure Schottky diodes.