The effect of A(2)B(6) passivating layers on properties of bulk p-Hg1-xCdxTe crystals has been studied. CdTe, ZnTe and US layers with 400 nm thickness were grown on the surface of a sample by a pulse laser deposition (PLD) method. The galvanomagnetic and photoelectric properties of the passivated crystals were measured. Accordingly, the layers have only a weak influence on the properties of the crystals. The electrical properties of the related Al-CdTe-Hg0.8Cd0.2Te and Al-CdS-Hg0.8Cd0.2Te heterostructures obtained by PLD method have been studied too.