Temperature dependent photoluminescence (PL) spectra of porous InP prepared by wet-electrochemical techniques are presented. Compared to the PL spectra of the bulk InP wafer measured at the corresponding temperatures, two peaks are observed in porous InP. One peak, which dominates at temperatures above 150 K, shows blue shift about 14 meV, while the other peak, which dominates at temperatures below 120 K, shows red shift about 33 meV. Quantum confinement effect is assumed to be the origin of the blue shifted PL. The red shifted PL emission is very sensitive to chemical treatment and is suggested to be due to the radiative recombination via surface states.