A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 mum. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120, 540, and 1230 A/cm(2), respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were no more than 60 and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately. (C) 2002 Elsevier Science Ltd. All rights reserved.