Solid-State Electronics, Vol.46, No.3, 349-352, 2002
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching
Caillat C,
Deleonibus S,
Guegan G,
Heitzmann M,
Nier ME,
Tedesco S,
Dal'zotto B,
Martin F,
Mur P,
Papon AM,
Lecarval G,
Previtali B,
Toffoli A,
Allain F,
Biswas S,
Jourdan F,
Fugier P,
Dichiaro JL
