Solid-State Electronics, Vol.46, No.3, 367-371, 2002
Reliability of ultra-thin film deep submicron SIMOX nMOSFETs
In this paper, the impact of silicon film thickness on the electrical properties of deep submicron SOI devices is thoroughly investigated down to ultra-thin Si layers. Particular attention is paid to the behavior of the low frequency noise and hot-carrier-induced degradation for Si films down to 10 nm. (C) 2002 Elsevier Science Ltd. All rights reserved.