Solid-State Electronics, Vol.46, No.3, 429-434, 2002
Analytical and numerical study of the impact of HALOs on short channel and hot carrier effects in scaled MOSFETs
This paper investigates the relationship between various HALO parameters best suited to achieve short channel effect control in MOSFETs with channel lengths of similar or equal to0.1 mum. New insights into the HALO control upon threshold voltage have been achieved by means of a simple analytical model. The analysis has been refined through extensive drift diffusion simulations based on a parametric representation of the HALO profile. (C) 2002 Elsevier Science Ltd. All rights reserved.