Solid-State Electronics, Vol.46, No.6, 911-913, 2002
1.6 A GaN Schottky rectifiers on bulk GaN substrates
Large area bulk GaN rectifiers with implanted p(+) guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mOmegacm(2). (C) 2002 Elsevier Science Ltd. All rights reserved.