Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

Chang TY; Lei TF; Chao TS; Chen SW; Kao LM; Chen SK; Tuan A; Su TP

Solid-State Electronics, Vol.46, No.8, 1097-1101, 2002

DOI10.1016/S0038-1101(02)00048-5 Export Citation

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

Chang TY, Lei TF, Chao TS, Chen SW, Kao LM, Chen SK, Tuan A, Su TP

In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.

Keywords:gate oxide integrity (GOI);Co-salicide;fluorine and nitrogen implantation;leakage performance;breakdown charge and stress induce leakage current (SILC)