An improved, physics-based analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and expressions for the transconductance, output conductance and capacitances for a small signal model. (C) 2002 Elsevier Science Ltd. All rights reserved.