InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors were grown on GaAs substrates. A 92 GHz powergain cutoff frequency f(max), and a 165 GHz current-gain cutoff frequency f(tau) were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 5 V while the DC current-gain beta was 27. In order to minimize the transistor operating junction temperature, high-thermal-conductivity InP metamorphic buffer layers were employed. (C) 2002 Elsevier Science Ltd. All rights reserved.