Solid-State Electronics, Vol.47, No.1, 57-60, 2003
Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
SiC rectifiers with an on/off current ratio of 4 x 10(5) (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 mum. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, R-ON, was 4.2 mOmega cm(2), which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (V-B)(2)/R-ON was as high as 156 MW cm(-2). (C) 2002 Elsevier Science Ltd. All rights reserved.