The design of the radio frequency integrated circuits by CMOS technologies requires an accurate and scaleable model, which can be valid in the GHz range for device non-linear behavior predictions [IEEE Trans Solid State Circuits 35 (2000) 186; IEEE J. Solid-State Circuit 33 (1998) 1510]. A modified 0.18 mum gate-length MOSFET rf large-signal model based on BSIM3v3 is presented. This large-signal model includes the required parasitic components to forecast device dc and rf characteristics. Additionally, the microwave load-pull and digital modulated evaluations have been carried out to verify the accuracy of this model, where a good agreement with experimental results can be achieved. (C) 2002 Elsevier Science Ltd. All rights reserved.