Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50 less than or equal to T less than or equal to 1000 K) and concentration (10(14) less than or equal to N less than or equal to 10(19) cm(-3)) ranges. The dependence of the temperature T. at which the mobility p is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.