A feasibility study of domino circuits using partially depleted SOI technology is conducted by focusing on the OR structure, known to be particularly sensitive to current leakage. By contrast to previous belief, the simulation results indicated that for the 0.145 mum technology node, the circuit could be destabilized by the floating body effects enhanced (channel) off current rather than parasitic BJT current. It was observed that current spiking also played a major role in discharging the pre-charge node during operation. It was found that this overall leakage (discharging) limited the number of input transistors on the OR circuit. It was therefore deemed necessary to make the level-restoring transistor stronger and/or limit the number of inputs to keep the circuit robust during operation. Keeping the body grounded was found to be an alternative solution to both of these leakage problems. (C) 2002 Elsevier Science Ltd. All rights reserved.