The nitridation of InAs, InP, and InSb by low-energy N-2(+) ion bombardment at different preparation parameters was studied by near-edge X-ray absorption fine structure, photoemission spectroscopy (PES), and resonant PES measurements. The investigated surface nitride layers mainly consist of compounds with In-N, V-N bonds and interstitial nitrogen (N-i). The final remaining nitride layer composition strongly depends on the chosen preparation parameters. The nitridation affect composition and annealing temperature offers several opportunities to affect defect curing by ordering and removing oxinitrides, N-O bonds and Ni from nitrided surfaces. (C) 2002 Elsevier Science Ltd. All rights reserved.