Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 x 10(4), respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance. (C) 2002 Elsevier Science Ltd. All rights reserved.