We evaluate the usefulness of partially depleted Sol CMOS devices fabricated in a 0.35 mu-m, technology on UNI-BOND material for electronics applications requiring robust operation under extreme environment conditions consisting of low and/or high temperature, and under substantial radiation exposure. The threshold voltage, effective mobility, and the impact ionization parameters were determined across temperature for both the nFETs and the pFETs. The radiation response was characterized using threshold voltage shifts of both the front-gate and back-gate transistors. These results suggest that this 0.35 pm partially depleted Sol CMOS technology is suitable for operation across a wide range of extreme environment conditions consisting of. cryogenic temperatures down to 86 K, elevated temperatures up to 573 K, and under radiation exposure to 1.3 Mrad(Si) total dose. (C) 2003 Elsevier Science Ltd. All rights reserved.