Strained SiCMOS (SS CMOS) technology: opportunities and challenges

Rim K; Anderson R; Boyd D; Cardone F; Chan K; Chen H; Christansen S; Chu J; Jenkins K; Kanarsky T; Koester S; Lee BH; Lee K; Mazzeo V; Mocuta A; Mocuta D; Mooney PM; Oldiges P; Ott J; Ronsheim P; Roy R; Steegen A; Yang M; Zhu H; Ieong M; Wong HSP

Solid-State Electronics, Vol.47, No.7, 1133-1139, 2003

DOI10.1016/S0038-1101(03)00041-8 Export Citation

Strained SiCMOS (SS CMOS) technology: opportunities and challenges

Rim K, Anderson R, Boyd D, Cardone F, Chan K, Chen H, Christansen S, Chu J, Jenkins K, Kanarsky T, Koester S, Lee BH, Lee K, Mazzeo V, Mocuta A, Mocuta D, Mooney PM, Oldiges P, Ott J, Ronsheim P, Roy R, Steegen A, Yang M, Zhu H, Ieong M, Wong HSP

Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted. (C) 2003 Elsevier Science Ltd. All rights reserved.