Solid-State Electronics, Vol.47, No.10, 1631-1635, 2003
PMNT films for integrated capacitors
This article investigates the sputter deposition of thin films in the solid solution of lead magnesium niobate with lead titanate (PMNT) by sputter deposition. The study was aimed at characterizing post-deposition annealed films at various temperatures. We proved full perovskite crystallization from 400 to 750 degreesC. From dielectric measurements, it is shown that the quality of the material improves gradually in this temperature range to reach a maximum of dielectric characteristics at 700 degreesC annealing. Dielectric constant reaches 2300 at dielectric maximum for this last film. Materials of different thickness were processed and low temperature annealing was specially studied for possible application in integrated capacitors. Structural, dielectric and ferroelectric characteristics are detailed for PMNT films with 30% lead titanate. (C) 2003 Elsevier Ltd. All rights reserved.