We investigate the effects of liner scheme on the line and via resistances of aluminum damascene interconnects. The lowest line (similar to0.19 Omega/sq. at 0.20 mum trench width) and via (similar to0.5 Omega/via at 0.35 mum diameter) resistances are obtained at each different liner schemes of 30 nm TiN/20 nm Ti and 50 nm Ti-only, respectively. An optimized liner scheme of 10 nm TiN/40 nm Ti is therefore proposed. This scheme minimizes the TiAl3 formation due to the interfacial reaction between the Al and the TiN, and produces the most satisfactory resistances of the line (similar to0.24 Omega/sq. at 0.2 mum trench width) and the via (similar to0.9 Omega/via at 0.35 mum diameter), respectively. (C) 2003 Elsevier Ltd. All rights reserved.