At high frequency, the MOSFET drain current noise and induced gate noise are generally accepted as dominated by the thermal noise as the MOSFET is operating in strong inversion region. However, controversy exists about the high-frequency noise in subthreshold region. This paper proposes unified high-frequency drain current noise and induced gate noise models valid in strong-, moderate- and weak-inversion regions. These models are necessary for the completeness of device noise model and helpful for low-noise high-frequency amplifier design with deep submicrometer technologies with MOSFETs operating in moderate inversion region. (C) 2003 Elsevier Ltd. All rights reserved.