Solid-State Electronics, Vol.47, No.11, 2127-2130, 2003
Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method
The rare earth erbium is doped into high-resistance silicon substrate using thermal diffusion process, and PN junction with good rectifying property is formed. The characteristic of diffused layer, the optoelectronic property of PN junction and photoluminescence spectrum (PL spectrum) are measured. The results of the experiments are analyzed. (C) 2003 Elsevier Ltd. All rights reserved.