We present a computationally efficient numerical solution of the first-order charge carrier trapping/annihilation kinetics in the gate oxides of metal-oxide-si I icon (MOS) devices under high-field stress using Runge-Kutta algorithm. Our proposed algorithm takes care of the variation of the independent variable stress time over a few orders of magnitude (e.g., 10-(10)-10(2) s). (C) 2003 Elsevier Ltd. All rights reserved.